MicroFET功率开关FDMJ1023PZ产品和FDFMJ2P023Z，适用于充电，同步DC / DC和负载开关及其他低功率（<30v）应用。这些功率开关可低至1.5v的栅极驱动电压水平，同时提供比低75％和66％低热阻其他解决办法。 fdmj1023pz和fdfmj2p023z使用的二点○毫米×="" 1.6mm的资深大律师飞兆半导体先进的powertrench技术包-="" 75，比3="" ×="" 3mm的使用ssot="" -="" 6封装和sc="" -="">

这些2.0毫米× 1.6mm的电力开关的MicroFET优势，能够提供{zy1}的热性能和电气性能，其性能和3mm x 3mm使用SSOT - 6封装，如电源开关。如移动电话，数码相机和便携式应用的游戏控制台，在超紧凑的封装，以提供{zj0}的性能是至关重要的，因为更多的功能将会集成在PCB是越来越小的空间。这些应用软件，并能够从开关好处，以确保在低至1.5V的栅极驱动电压的特色。

FDMJ1023P和FDFMJ2P023Z的主要特点包括：

-节省空间，因为这些开关的MicroFET优于SC - 70封装，电源开关货量则下跌20％
-确保低- 1.5V的栅极驱动电压操作，便携式应用程序可以满足电压要求
-优异的电性能和热性能
- =- @ VGS电压为2.5V
- 89 C热电阻一百六十〇米/糯

飞兆半导体提供业界最广泛，提高热性能的超紧凑高低端设备，以满足低功耗应用。这些易于实现和节省空间的高性能MOSFET适用于所有低压开关和功率管理客户/电池充电设备。

FDMJ1023PZ和FDFMJ2P023Z无铅（无铅）端子，潮湿敏感度符合与IPC / JEDEC的的J - STD - 020标准无铅回流焊的要求。所有飞兆半导体产品均设计满足欧盟有害物质限制指令（RoHS）的要求。

Siu Fei MicroFET push power switch to reduce resistance in portable applications and Rds (on)

MicroFET power switching FDMJ1023PZ Products and FDFMJ2P023Z, applicable to charging, asynchronous DC / DC and load switching and other low-power (<30v) applications.="" these="" power="" switches="" can="" be="" as="" low="" as="" 1.5v="" gate="" drive="" voltage="" level,="" while="" providing="" other="" solutions="" than="" the="" lower="" 75%="" and="" 66%="" lower="" thermal="" resistance.="" fdmj1023pz="" and="" fdfmj2p023z="" using="" fairchild's="" advanced="" powertrench="" technology="" package="" for="" the="" 2.0mm="" x="" 1.6mm="" sc-75,="" than="" the="" 3="" x="" 3mm="" ssot-6="" package="" and="" sc-70="" package="" size="" decreases,="" respectively,="" 65%="" and="">

these 2.0mm x 1.6mm MicroFET advantage of the power switches are able to provide excellent thermal and electrical performance, their performance and 3mm x 3mm SSOT-6 package, like the power switch. For portable applications such as mobile phones, digital cameras and game consoles, in the ultra-compact package to provide the best performance is crucial, because more features will be integrated in the PCB is getting smaller and smaller space. These applications and be able to benefit from the switch to ensure that as low as 1.5V gate drive voltage operation characteristics.

FDMJ1023P and FDFMJ2P023Z The main features include:

- save space, because these MicroFET switch better than the SC-70 package, power switching volume decreases 20%
- to ensure that low - 1.5V gate drive voltage to operate, portable applications can satisfy the voltage requirements of
- excellent electrical and thermal properties
- 160m @ VGS =-2.5V
- thermal resistance of 89 C / W< br="">
Fairchild provides the industry’s most extensive and improve the thermal performance of ultra-compact high-low-side devices, targeting low-power applications. These easy to realize and space-saving high-performance MOSFET applicable to customers of all low-voltage switches and power management / battery charging devices.

FDMJ1023PZ and FDFMJ2P023Z lead-free (Pb-free) terminals, moisture sensitivity in line with the IPC / JEDEC J-STD-020 standards for lead-free reflow requirements. All Fairchild products are designed to meet the EU limit of Hazardous Substances Directive (RoHs) requirements. (07-11-27)