西化仪（北京）科技有限公司西安办
联系人：侯小姐
联系电话:18909242264/15319456198
传真：029-85221839
电子邮件:xian@midwest.com.cn
地址：西安市雁塔区含光南路178号吉祥大厦1807室 邮编：710065
全国24小时询价热线：400-705-0014
Reflective
Semiconductor Optical Amplifier
Features
· 1.55μm operation
· Low polarisation dependent gain (<1.5dB)
· High—small signal gain (>20dB)
· Low front facet reflectivity
· Low ASE ripple (<1.5dB)
· 1.2GHz electrical bandwidth
· InP Buried Heterostructure design
· TEC cooled
· SMA style or 14 pin package available
· Available as packaged or chip-on-carrier
· APC connector provided
SOA-RL-OEC-1550
Application Examples
· WDM-PON colourless reflective amplifying modulator
· External cavity laser gain block
· ASE Source
Description
The SOA-RL-OEC-1550 is a low polarisation dependent gain device. It has low front facet reflectivity and is ideal as
a reflective colourless amplifying modulator in WDM-PON schemes and as a gain block for external cavity lasers. A
high polarisation dependent gain device is also available (SOA-R-OEC-1550).
The SOA-RL-OEC-1550 utilises CIPs proprietary InP buried heterostructure design and is available in either a 7-pin
butterfly/SMA package with a thermistor, thermo-electric cooler and single mode fibre pigtails or as a custom chipon-
carrier product. It is generally intended for use with the Angled Polished Connectors (APC) provided. The device
is supplied with a 50O input impedance to the SMA port and has a direct modulation bandwidth of ~1.2GHz.
Optical and electrical specification
Item Test condition Min. Typ. Max. Unit
Integrated ASE Power I = 50mA 0.5 mW
Small Signal Gain I = 50mA 20 dB
Gain Peak Wavelength I = 50mA 1530 1570 nm
Polarisation Dependent Gain (PDG) I = 50mA 1.5 dB
Noise Figure (NF) I = 50mA 7 8.5 dB
ASE Ripple at Peak (RG) I = 50mA 0.5 1.5 dB
Saturated Output Power (PSAT) I = 50mA 2 dBm
Electrical Bandwidth (BW) I = 80mA PIN = 0dBm 1.2 GHz
Electrical Input impedance 50 O
分类:物理,囯际直购
历史资料:版本 版本 版本 版本 版本 版本 版本 版本 版本 版本
联系人：侯小姐
联系电话:18909242264/15319456198
传真：029-85221839
电子邮件:xian@midwest.com.cn
地址：西安市雁塔区含光南路178号吉祥大厦1807室 邮编：710065
全国24小时询价热线：400-705-0014
Reflective
Semiconductor Optical Amplifier
Features
· 1.55μm operation
· Low polarisation dependent gain (<1.5dB)
· High—small signal gain (>20dB)
· Low front facet reflectivity
· Low ASE ripple (<1.5dB)
· 1.2GHz electrical bandwidth
· InP Buried Heterostructure design
· TEC cooled
· SMA style or 14 pin package available
· Available as packaged or chip-on-carrier
· APC connector provided
SOA-RL-OEC-1550
Application Examples
· WDM-PON colourless reflective amplifying modulator
· External cavity laser gain block
· ASE Source
Description
The SOA-RL-OEC-1550 is a low polarisation dependent gain device. It has low front facet reflectivity and is ideal as
a reflective colourless amplifying modulator in WDM-PON schemes and as a gain block for external cavity lasers. A
high polarisation dependent gain device is also available (SOA-R-OEC-1550).
The SOA-RL-OEC-1550 utilises CIPs proprietary InP buried heterostructure design and is available in either a 7-pin
butterfly/SMA package with a thermistor, thermo-electric cooler and single mode fibre pigtails or as a custom chipon-
carrier product. It is generally intended for use with the Angled Polished Connectors (APC) provided. The device
is supplied with a 50O input impedance to the SMA port and has a direct modulation bandwidth of ~1.2GHz.
Optical and electrical specification
Item Test condition Min. Typ. Max. Unit
Integrated ASE Power I = 50mA 0.5 mW
Small Signal Gain I = 50mA 20 dB
Gain Peak Wavelength I = 50mA 1530 1570 nm
Polarisation Dependent Gain (PDG) I = 50mA 1.5 dB
Noise Figure (NF) I = 50mA 7 8.5 dB
ASE Ripple at Peak (RG) I = 50mA 0.5 1.5 dB
Saturated Output Power (PSAT) I = 50mA 2 dBm
Electrical Bandwidth (BW) I = 80mA PIN = 0dBm 1.2 GHz
Electrical Input impedance 50 O
分类:物理,囯际直购
历史资料:版本 版本 版本 版本 版本 版本 版本 版本 版本 版本
