频率{zg}的石墨烯晶体管的研发成功是由美国国防部高级研究计划局资助的碳射频的里程碑。
此高频率是在晶圆外延生长的石墨烯上获得的，处理工艺和高级硅设备制造技术也是兼容的。
"石墨稀的一个主要优点就是电子传输速度极快，这对下一代高速度、高效率晶体管的研发来讲，意义非常重大。我们现在获得的这一重要技术突破表明了石墨稀可以用来生产高效能的设备和集成电路。"IBM的一个研究人员表示。
石墨稀由蜂窝状的单层碳原子组成，呈二维结构，具有电子，光学，机械和热性能。近些年来科学家们对它进行了深入研究。
独特而又性能良好的石墨晶片是通过一个碳化硅基体热分解合成的。石墨烯晶体管是金属顶栅结构，包含聚合物和高介电常数氧化物的绝缘栈。栅极长度适度为240nm，为以后对其进行进一步优化留下了足够的空间。
值得一提的是，石墨烯晶体管频率{zg}速度已经达到迄今为止的{zg}速，而此前的{zh0}成绩是40Ghz。而且，从xx石墨中提取的石墨稀也具有此性能，这就证明了来源不同的石墨稀都可以应用。
Scientists Demonstrate World's Fastest Graphene Transistor
This accomplishment is a key milestone for the Carbon Electronics for RF Applications (CERA) program funded by DARPA, in an effort to develop next-generation communication devices.
The high frequency record was achieved using wafer-scale, epitaxially grown graphene using processing technology compatible to that used in advanced silicon device fabrication.
"A key advantage of graphene lies in the very high speeds in which electrons propagate, which is essential for achieving high-speed, high-performance next generation transistors," said Dr. T.C. Chen, vice president, Science and Technology, IBM Research. "The breakthrough we are announcing demonstrates clearly that graphene can be utilized to produce high performance devices and integrated circuits."
Graphene is a single atom-thick layer of carbon atoms bonded in a hexagonal honeycomb-like arrangement. This two-dimensional form of carbon has unique electrical, optical, mechanical and thermal properties and its technological applications are being explored intensely.
Uniform and high-quality graphene wafers were synthesized by thermal decomposition of a silicon carbide (SiC) substrate. The graphene transistor itself utilized a metal top-gate architecture and a novel gate insulator stack involving a polymer and a high dielectric constant oxide. The gate length was modest, 240 nanometers, leaving plenty of space for further optimization of its performance by scaling down the gate length.
It is noteworthy that the frequency performance of the graphene device already exceeds the cut-off frequency of state-of-the-art silicon transistors of the same gate length (~ 40 GigaHertz). Similar performance was obtained from devices based on graphene obtained from natural graphite, proving that high performance can be obtained from graphene of different origins.
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