一、??? 描述；Description
?L8IR850B-45系列是采用GaAlAs技术的高功率红外发射二极管，采用透明的塑料封装。
在一个相似的波长内与标准GaAs比较，使用GaAlAs技术的这些发射二极管达到超过{bfb}辐射功率改善。正向电压在低电流和高脉冲电流工作条件下大致对应于标准技术。
所以这些发射二极管是理想的作为标准发射器件的高性能产品。
L8IR850B-45 is a high efficiency infrared emitting diode in GaAlAs technology, molded in clear. Blue grey tinted plastic packages In comparison with the standard GaAs on GaAlAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.
Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
二、???? 基本参数；Principal character
三、???? 极限参数；Absolute Maximum Ratings at Ta=25℃
| 参数
Parameter |
测试条件
Test Conditions |
符号Symbol | 数值
Value |
单位Unit |
| 正向峰值电流
Peak Forward Current |
? | Ifm | 100 | mA |
| 正向脉冲电流
Surge Forward Current |
tp/T = 0.5, tp = 100 μs | Ifsm | 1.5 | A |
| 耗散功率
Power Dissipation |
? | Pv | 200 | mW |
| 结温
Junction Temperature |
? | Tj | 100 | ℃ |
| 工作温度范围
Operating Temperature Range |
? | Tamb | -25? +80 | ℃ |
| 存储温度范围
Storage Temperature Range |
? | Tstg | -55? +100 | ℃ |
| 焊接温度
Soldering Temperature |
t ≦ 5sec, 4 mm from case | Tsd | 260 | ℃ |
四、???? 光电特性；Electrical Optical Characteristics at Ta= 25℃
| 参数
Parameter |
测试条件
Test Conditions |
符号
Symbol |
最小
Min |
典型
Typ |
{zd0}
Max |
单位
Unit |
| 正向电压
Forward Voltage |
IF = 50mA | VF | ? | 1.4 | 1.45 | V |
| 正向电流
Forward Current |
? | If | ? | 50 | ? | mA |
| 反向电压
Reverse voltage |
IR=5μA | VR | 5 | ? | ? | V |
| 反向漏电流
Reverse Current |
VR=5V | IR | ? | ? | ? 5 | μA |
| 发射强度
Radiant Intensity |
IF=50mA | Ie | 20 | ? | 25 | mW/sr |
| 结电容
Junction Capacitance |
VR = 0 V, f = 1 MHz,
?E = 0 |
Cj | ? | 25 | ? | Pf |
| 功率衰减系数
Temp. Coefficient of φe |
IF = 50 mA | TKφe | ? | -0.6 | ? | %/K |
| 发射角度
Angle of Half Intensity |
? | 2θ1/2 | ? | 45 | ? | deg |
| 峰值波长
Peak Wavelength |
IF = 50 mA | λp | ? | 850 | ? | nm |
| 光谱偏差范围
Spectral Bandwidth |
IF = 50 mA | △λ | ? | 50 | ? | nm |
| 波段衰减系数
Temp. Coefficient of λp |
IF = 50 mA | TKλp | ? | 0.2 | ? | nm/K |
| 上升时间
Rise Time |
IF = 50 mA | tr | ? | 25 | ? | ns |
| 下降时间
Fall Time |
IF = 50 mA | tf | ? | 13 | ? | ns |
五、???? 尺寸
