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employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
| Category: | Discrete Semiconductor Products |
|---|---|
| Family: | Diodes, Rectifiers - Single |
| Voltage - DC Reverse (Vr) (Max): | 40V |
| Voltage - Forward (Vf) (Max) @ If: | 550mV @ 1A |
| Current - Average Rectified (Io): | 1A |
| Current - Reverse Leakage @ Vr: | 500µA @ 40V |
| Diode Type: | Schottky |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type: | Surface Mount |
| Package / Case: | SMA |
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