DESCRIPTION
The JXP3N10MRG uses Shield Gate Trench
technology that is uniquely optimized to provide
the most efficient high frequency switching
performance. Both conduction and switching
power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is
ideal for high-frequency switching and
synchronous rectification.
GENERAL FEATURES
ID =3.2A,VDS=100V
RDS(ON)(Typ.)=100mΩ@VGS=10V
RDS(ON)(Typ.)=130mΩ@VGS=4.5V
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
APPLICATION
PWM applications
Load switch
