NP2018DR 16A/20V 场效应MOS管N沟道 DFN封装|深圳市晶立弘泰电子科技有限公司|免费b2b网站

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Description
The NP2018DR uses advanced trench technology
to provide excellent R DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM

applications.

General Features

VDS =20V，ID=16A

RDS(ON) (Typ.)=11.5mΩ @V GS=2.5V

RDS(ON) (Typ.)=9mΩ @V GS=4.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application
PWM applications

Load switch

Package
DFN2*2-6L-B

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