N-Channel Enhancement Mode Field Effect Transistor
Features
VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A
VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A