Description
The NP2060G uses advanced trench technology
to provide excellent R DS(ON) and low gate charge.It can
be used in a wide variety of applications.
General Features
V DS =20V，I D =60A
R DS(ON) (Typ.)= 2.9mΩ @V GS =4.5V
R DS(ON) (Typ.)= 3.5mΩ @V GS =2.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Package
TO-252-2L
