Description
The NP1005 uses advanced trench technology and
design to provide excellent R DS(ON)
General Features
with low gate charge.
It can be used in a wide variety of applications.
I D =7A,V DS
R
=100V
DS(ON) (Typ.)=115mΩ@V GS
R
=10V
DS(ON) (Typ.)=180mΩ@V GS
High density cell design for ultra low R
=4.5V
Fully characterized avalanche voltage and current
DS(ON)
Good stability and uniformity with high E
Excellent package for good heat dissipation
AS
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Package
SOT-23-6L
