NP100N03D6-N-G 100A/30V N沟道场效应MOS管 PDFN5*6-8 内阻3.4|深圳市芯庆电子有限公司|免费b2b网站

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Description

The NP100N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

General Features

VDS =30V，ID =100A

RDS(ON)(Typ.)=3.4 mΩ @VGS=10V

RDS(ON)(Typ.)=5.1 mΩ @VGS=4.5V

Very low on-resistance RDS(on)

150 °C operating temperature

100% UIS tested

Application

Synchronus Rectification in DC/DC and AC/DC Converters

Industrial and Motor Drive applications

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