Description
The NP15N10G uses advanced trench technology
to provide excellent R DS(ON)
General Features
and low gate charge.It can
be used in a wide variety of applications.
V DS =100V I D
R
=15A
DS(ON) (Typ.)=82mΩ @V GS
R
=10V
DS(ON) (Typ.)=90mΩ @V GS
High density cell design for ultra low Rdson
=4.5V
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
Excellent package for good heat dissipation
AS
Special process technology for high ESD capability
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Package
TO-252-2L
