磷化镓
面议
GaP wafers for LPE
|
Conductivity Type |
n-type |
p-type |
|
|
Growth method / Dopant |
LEC/S |
LEC/Si |
LEC/Zn |
|
Carrier concentration (cm-3) |
*(1>÷20) x 1017 |
(1÷10) x 1018 |
|
|
Resistivity (Ω x cm) |
0,250÷0,100 |
0,04÷0,02 |
|
|
Mobility (cm2/V x sec) |
150÷101 |
≥40 |
|
|
EPD average (cm-2) |
≤1 x 105 |
||
|
Diameter (mm)** |
50.8±0.2 |
||
|
Standard thickness ** (*m) |
290±10 |
||
|
Orientation** |
(111) |
||
|
Surface quality |
front side - as cut |
||
|
Bow |
<10 |
||
|
TTV |
<10 |
||
GaP wafers for MOCVD
|
Conductivity Type |
n-type |
|
|
Growth method / Dopant |
LEC/S |
|
|
Carrier concentration (cm-3) |
(5÷20) x 1017 |
|
|
Resistivity (Ω x cm) |
0.10÷0.04 |
|
|
Mobility (cm2/V x sec) |
≥50 |
|
|
EPD average (cm-2) |
≤1 x 105 |
|
|
Diameter (mm)* |
50.8±0.2 |
76.2±0.2 |
|
Standard thickness * (*m) |
300±20 |
350±20 |
|
Orientation* |
(100)*** |
|
|
Surface quality |
front side - epi-ready |
|
|
Bow |
<10 |
<15 |
|
TTV |
<7 |
<15 |
GaP wafers for optics
|
Conductivity Type |
n-type |
|
|
Growth method / Dopant |
LEC/undoped |
|
|
Carrier concentration (cm-3) |
<2 x 1016 |
|
|
Mobility (cm2/V x sec) |
≥180 |
|
|
EPD average (cm-2) |
≤2 x 105 |
|
|
Absorption coefficient (cm-1) |
1.93 (D=580 nm) |
|
|
Diameter (mm)* |
50.8±0.2 |
76.2±0.2 |
|
Standard thickness * (*m) |
≥300 |
≥500 |
|
Orientation |
(100)/(111) |
|
|
Surface quality |
front side - optically polished/as cut |
|
Semi-insulating GaP wafers
|
Conductivity Type |
i-type |
|
|
Growth method / Dopant |
LEC/Cr/Ni/Mn |
|
|
Resistivity (Ω x cm) |
≥106 |
|
|
EPD average (cm-2) |
≤2 x 105 |
|
|
Diameter (mm) |
50.8±0.2 |
76.2±0.2 |
|
Standard thickness * (*m) |
300±20 |
350±20 |
|
Orientation |
(100)/(111) |
|
|
Mis-orientation |
0-10º toward any plane upon request |
0-5º toward any plane upon request |
|
Surface quality |
front side - epi-ready |
|
|
Bow |
<10 |
<15 |
|
TTV |
<10 |
<15 |
